TRANSISTOR.BS-170 N-MOS-FET 101 7687 FR

15.58.085

New

N-channel enhancement mode
vertical D-MOS transistor in TO-92
variant envelope and intended for use
in relay, high-speed and
line-transformer drivers.
Drain-source voltage VDS max. 60 V
Gate-source voltage VGS max. 15 V
Drain current (DC) ID max. 500 mA
...

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N-channel enhancement mode
vertical D-MOS transistor in TO-92
variant envelope and intended for use
in relay, high-speed and
line-transformer drivers.
Drain-source voltage VDS max. 60 V
Gate-source voltage VGS max. 15 V
Drain current (DC) ID max. 500 mA
Total power dissipation up to Tamb = 25 ÁC Ptot max. 830 mW
Junction temperature Tj max. 150 ÁC
Drain-source ON-resistance
VGS = 10 V; ID = 200 mA RDS(on) max. 5 W

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TRANSISTOR.BS-170 N-MOS-FET 101 7687 FR

TRANSISTOR.BS-170 N-MOS-FET 101 7687 FR

N-channel enhancement mode
vertical D-MOS transistor in TO-92
variant envelope and intended for use
in relay, high-speed and
line-transformer drivers.
Drain-source voltage VDS max. 60 V
Gate-source voltage VGS max. 15 V
Drain current (DC) ID max. 500 mA
...

Write a review

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