TRANSISTOR BSMI81-A + CONECTOR 85359000 EUPEC

15.58.065

New

VDS = 800 V
I D = 36 A
R DS(on)= 0.24 m
Package SSW MOS 1
Single switch power MOSFET module
lN channel, enhancement mode
Package with insulated metal base plate
Maximum Ratings:
..

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VDS = 800 V
I D = 36 A
R DS(on)= 0.24 m
Package SSW MOS 1
Single switch power MOSFET module
lN channel, enhancement mode
Package with insulated metal base plate
Maximum Ratings:
Drain-source voltage VDS 800 V
Drain-gate voltage, RGS = 20 k VDGR 800
Gate-source voltage VGS ± 20
Continuous drain current, TC = 25 C ID 36 A
Pulsed drain current, TC = 25 C ID puls 144
Power dissipation, TC = 25 C Ptot 700 W
Chip temperature Tj max 150_C
Insulation test voltage, t = 1 min. Vis 2,5 KVac
Creepage distance, drain-source 16 mm
Clearance, drain-source 11
DIN humidity category, DIN 40 040 F

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TRANSISTOR BSMI81-A + CONECTOR 85359000 EUPEC

TRANSISTOR BSMI81-A + CONECTOR 85359000 EUPEC

VDS = 800 V
I D = 36 A
R DS(on)= 0.24 m
Package SSW MOS 1
Single switch power MOSFET module
lN channel, enhancement mode
Package with insulated metal base plate
Maximum Ratings:
..

Write a review

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